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Fast Magnetoresistive Random-Access MemoryMagnetoresistive binary digital memories of proposed new type expected to feature high speed, nonvolatility, ability to withstand ionizing radiation, high density, and low power. In memory cell, magnetoresistive effect exploited more efficiently by use of ferromagnetic material to store datum and adjacent magnetoresistive material to sense datum for readout. Because relative change in sensed resistance between "zero" and "one" states greater, shorter sampling and readout access times achievable.
Document ID
19910000134
Document Type
Other - NASA Tech Brief
Authors
Wu, Jiin-Chuan (Caltech)
Stadler, Henry L. (Caltech)
Katti, Romney R. (Caltech)
Date Acquired
August 14, 2013
Publication Date
April 1, 1991
Publication Information
Publication: NASA Tech Briefs
Volume: 15
Issue: 4
ISSN: 0145-319X
Subject Category
ELECTRONIC COMPONENTS AND CIRCUITS
Report/Patent Number
NPO-17954
Distribution Limits
Public
Copyright
Work of the US Gov. Public Use Permitted.