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Flange Correction For Metal-To-Metal ContactsImproved mathematical model provides correction for flange effect in estimating resistance of square contact between two metal layers from standard four-terminal measurements. Extended version of one developed previously for contact between metal layer and semiconductor layer, wherein flange effect important in semiconductor layer only. Here flange effect in both metal layers significant. Interfacial resistances extracted more accurately.
Document ID
19910000189
Acquisition Source
Legacy CDMS
Document Type
Other - NASA Tech Brief
Authors
Lieneweg, Udo
(Caltech)
Hannaman, David J.
(Caltech)
Date Acquired
August 14, 2013
Publication Date
May 1, 1991
Publication Information
Publication: NASA Tech Briefs
Volume: 15
Issue: 5
ISSN: 0145-319X
Subject Category
Electronic Components And Circuits
Report/Patent Number
NPO-18052
Accession Number
91B10189
Distribution Limits
Public
Copyright
Work of the US Gov. Public Use Permitted.

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