NASA Logo

NTRS

NTRS - NASA Technical Reports Server

Back to Results
Doping To Reduce Base Resistances Of Bipolar TransistorsModified doping profile proposed to reduce base resistance of bipolar transistors. A p/p+ base-doping profile reduces base resistance without reducing current gain. Proposed low/high base-doping profile realized by such low-temperature deposition techniques as molecular-beam epitaxy, ultra-high-vacuum chemical-vapor deposition, and limited-reaction epitaxy. Produces desired doping profiles without excessive diffusion of dopant.
Document ID
19910000191
Acquisition Source
Legacy CDMS
Document Type
Other - NASA Tech Brief
Authors
Lin, True-Lon
(Caltech)
Date Acquired
August 14, 2013
Publication Date
May 1, 1991
Publication Information
Publication: NASA Tech Briefs
Volume: 15
Issue: 5
ISSN: 0145-319X
Subject Category
Electronic Components And Circuits
Report/Patent Number
NPO-17948
Accession Number
91B10191
Distribution Limits
Public
Copyright
Work of the US Gov. Public Use Permitted.

Available Downloads

There are no available downloads for this record.
No Preview Available