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High-Power AlGaAs Quantum-Well Lasers On Si SubstratesAlxGa1-xAs lasers of graded-index-of-refraction, separate-confinement-heterostructure, single-quantum-well type fabricated on silicon substrates by migration-enhanced molecular-beam epitaxy followed by metalorganic vapor-phase epitaxy. They are intermediate products of continuing effort to develop low-threshold-current, high-efficiency lasers for parallel optical interconnections between large-scale optoelectronic integrated circuits.
Document ID
19910000423
Acquisition Source
Legacy CDMS
Document Type
Other - NASA Tech Brief
Authors
Kim, Jae-Hoon (Caltech)
Lang, Robert J. (Caltech)
Radhakrishnan, Gouri (Caltech)
Katz, Joseph (Caltech)
Date Acquired
August 14, 2013
Publication Date
September 1, 1991
Publication Information
Publication: NASA Tech Briefs
Volume: 15
Issue: 9
ISSN: 0145-319X
Subject Category
Electronic Components And Circuits
Report/Patent Number
NPO-17988
Accession Number
91B10423
Distribution Limits
Public
Copyright
Work of the US Gov. Public Use Permitted.

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