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Edge-Geometry NbN/MgO/NbN Tunnel JunctionsSuperconductor/insulator/superconductor (SIS) tunnel junctions fabricated with base and counter electrodes of NbN separated by thin layers of MgO. Useful as submillimeter-wave mixers and fast switches. Use of edge geometry to define small junction makes possible to fabricate junction by process including conventional photolithography.
Document ID
19910000489
Acquisition Source
Legacy CDMS
Document Type
Other - NASA Tech Brief
Authors
Hunt, Brian D. (Caltech)
Leduc, Henry G. (Caltech)
Date Acquired
August 14, 2013
Publication Date
October 1, 1991
Publication Information
Publication: NASA Tech Briefs
Volume: 15
Issue: 10
ISSN: 0145-319X
Subject Category
Electronic Components And Circuits
Report/Patent Number
NPO-17812
Accession Number
91B10489
Distribution Limits
Public
Copyright
Work of the US Gov. Public Use Permitted.

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