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Magnet/Hall-Effect Random-Access MemoryIn proposed magnet/Hall-effect random-access memory (MHRAM), bits of data stored magnetically in Perm-alloy (or equivalent)-film memory elements and read out by using Hall-effect sensors to detect magnetization. Value of each bit represented by polarity of magnetization. Retains data for indefinite time or until data rewritten. Speed of Hall-effect sensors in MHRAM results in readout times of about 100 nanoseconds. Other characteristics include high immunity to ionizing radiation and storage densities of order 10(Sup6)bits/cm(Sup 2) or more.
Document ID
19910000570
Acquisition Source
Legacy CDMS
Document Type
Other - NASA Tech Brief
Authors
Wu, Jiin-Chuan
(Caltech)
Stadler, Henry L.
(Caltech)
Katti, Romney R.
(Caltech)
Date Acquired
August 14, 2013
Publication Date
November 1, 1991
Publication Information
Publication: NASA Tech Briefs
Volume: 15
Issue: 11
ISSN: 0145-319X
Subject Category
Electronic Components And Circuits
Report/Patent Number
NPO-17999
Accession Number
91B10570
Distribution Limits
Public
Copyright
Work of the US Gov. Public Use Permitted.

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