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Magnetic Analog Random-Access MemoryProposed integrated, solid-state, analog random-access memory base on principle of magnetic writing and magnetoresistive reading. Current in writing conductor magnetizes storage layer. Remanent magnetization in storage layer penetrates readout layer and detected by magnetoresistive effect or Hall effect. Memory cells are part of integrated circuit including associated reading and writing transistors. Intended to provide high storage density and rapid access, nonvolatile, consumes little power, and relatively invulnerable to ionizing radiation.
Document ID
19910000571
Acquisition Source
Legacy CDMS
Document Type
Other - NASA Tech Brief
Authors
Katti, Romney R.
(Caltech)
Wu, Jiin-Chuan
(Caltech)
Stadler, Henry L.
(Caltech)
Date Acquired
August 14, 2013
Publication Date
November 1, 1991
Publication Information
Publication: NASA Tech Briefs
Volume: 15
Issue: 11
ISSN: 0145-319X
Subject Category
Electronic Components And Circuits
Report/Patent Number
NPO-17998
Accession Number
91B10571
Distribution Limits
Public
Copyright
Work of the US Gov. Public Use Permitted.

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