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A Cooled 1- to 2-GHz Balanced HEMT AmplifierThe design details and measurement results for a cooled L-band (1 to 2 GHz) balanced high electron mobility transistor (HEMT) amplifier are presented. The amplifier uses commercially available packaged HEMT devices (Fujitsu FHR02FH). At a physical temperature of 12 K, the amplifier achieves noise temperatures between 3 and 6 K over the 1 to 2 GHz band. The associated gain is approximately 20 dB.
Document ID
19910022940
Acquisition Source
Legacy CDMS
Document Type
Reprint (Version printed in journal)
Authors
G. G. Ortiz (Jet Propulsion Laboratory La Cañada Flintridge, United States)
S. Padin (Owens Valley Radio Observatory Pasadena, CA., United States)
Date Acquired
September 6, 2013
Publication Date
August 15, 1991
Publication Information
Publication: The Telecommunications and Data Acquisition Report
Subject Category
Communications And Radar
Accession Number
91N32254
Funding Number(s)
PROJECT: RTOP 310-20-66-09-01
Distribution Limits
Public
Copyright
Work of the US Gov. Public Use Permitted.
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