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W-band monolithic oscillator using InAlAs/InGaAs HEMTA W-band monolithic integrated oscillator circuit was designed and fabricated using submicron HEMT technology. The oscillation frequency was around 81 GHz and the power was -7 dBm at the chip level. This is the first report of an InAlAs/InGaAs monolithic oscillator operating at the W-band.
Document ID
19910027614
Acquisition Source
Legacy CDMS
Document Type
Reprint (Version printed in journal)
Authors
Kwon, Y. (Michigan Univ. Ann Arbor, MI, United States)
Pavlidis, D. (Michigan Univ. Ann Arbor, MI, United States)
Tutt, M. (Michigan Univ. Ann Arbor, MI, United States)
Ng, G. I. (Michigan Univ. Ann Arbor, MI, United States)
Lai, R. (Michigan, University Ann Arbor, United States)
Date Acquired
August 14, 2013
Publication Date
August 30, 1990
Publication Information
Publication: Electronics Letters
Volume: 26
ISSN: 0013-5194
Subject Category
Electronics And Electrical Engineering
Accession Number
91A12237
Funding Number(s)
CONTRACT_GRANT: NAGW-1334
CONTRACT_GRANT: DAAL03-87-K-0007
Distribution Limits
Public
Copyright
Other

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