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Oxidation of the Si(100) surface promoted by Sr overlayer - An X-ray photoemission studyThe interaction of strontium films with the underlaying Si (100) surface and the Sr-promoted low-temperature oxidation of Si were investigated, using XPS, at three different Sr coverages (theta): theta = 0.55 monolayer (ML), theta = 1 ML, and theta = 1.85 ML. Oxygen adsorption was studied both at room temperature and at 500 C, and at oxygen exposures up to 2 x 10 to the 6th L (1 L = 10 to the -6th torr) and 2 x 10 to the 5th L, respectively. The XPS spectra of the Si2p, O1s, and Sr3d core levels were measured for the atomically clean Si, the Sr-covered Si, and for the Sr-covered Si after each oxygen exposure. Results indicate that Sr interacts with the Si(100) surface forming a strong ionic bond, and that Sr promotes the oxidation of the Si (100) surface.
Document ID
19910028175
Acquisition Source
Legacy CDMS
Document Type
Reprint (Version printed in journal)
External Source(s)
Authors
Mesarwi, A.
(Houston Univ. TX, United States)
Fan, W. C.
(Houston Univ. TX, United States)
Ignatiev, A.
(Houston, University TX, United States)
Date Acquired
August 14, 2013
Publication Date
October 1, 1990
Publication Information
Publication: Journal of Applied Physics
Volume: 68
ISSN: 0021-8979
Subject Category
Electronics And Electrical Engineering
Accession Number
91A12798
Distribution Limits
Public
Copyright
Other

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