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Piezoresistive silicon pressure sensors in cryogenic environmentThis paper presents data on low-temperature measurements of silicon pressure sensors. It was found that both the piezoresistance coefficients and the charge-carrier mobility increase with decreasing temperature. For lightly doped semiconductor materials, the density of free charge carriers decreases with temperature and can freeze out eventually. However, the effect of carrier freeze-out can be minimized by increasing the impurity content to higher levels, at which the temperature dependency of piezoresistance coefficients is reduced. An impurity density of 1 x 10 to the 19th/cu cm was found to be optimal for cryogenic applications of pressure sensor dies.
Document ID
19910035073
Document Type
Conference Paper
Authors
Kahng, Seun K. (Oklahoma, University Norman, United States)
Chapman, John J. (NASA Langley Research Center Hampton, VA, United States)
Date Acquired
August 15, 2013
Publication Date
January 1, 1989
Subject Category
INSTRUMENTATION AND PHOTOGRAPHY
Meeting Information
International Instrumentation Symposium(Orlando, FL)
Distribution Limits
Public
Copyright
Other