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Growth and characterization of CdS crystalsA growth method for the physical vapor transport of compound semiconductors in closed ampoules is described. With the unique techniques applied in the heat treatment of the starting materials and the temperature profiles provided by the three-zone translational furnace, large crystals of CdS have been grown successfully by the method at lower temperatures than previously used. Both unseeded and seeded growth have been investigated. The CdS crystals were examined using optical and scanning electron microscopies (SEM) to study the microstructure and the dislocation etch-pits. The crystals were further characterized by infrared (IR) and ultraviolet (UV) transmission measurements.
Document ID
19910037063
Acquisition Source
Legacy CDMS
Document Type
Reprint (Version printed in journal)
Authors
Su, Ching-Hua
(NASA Marshall Space Flight Center Huntsville, AL, United States)
Lehoczky, S. L.
(NASA Marshall Space Flight Center Huntsville, AL, United States)
Szofran, F. R.
(NASA Marshall Space Flight Center Huntsville, AL, United States)
Date Acquired
August 15, 2013
Publication Date
April 1, 1990
Publication Information
Publication: Journal of Crystal Growth
Volume: 101
Issue: 1-4,
ISSN: 0022-0248
Subject Category
Solid-State Physics
Accession Number
91A21686
Distribution Limits
Public
Copyright
Other

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