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Alpha-particle sensitive test SRAMsA bench-level test is being developed to evaluate memory-cell upsets in a test SRAM designed with a cell offset voltage. This offset voltage controls the critical charge needed to upset the cell. The effect is demonstrated using a specially designed 2-micron n-well CMOS 4-kb test SRAM and a Po-208 5.1-MeV 0.61-LET alpha-particle source. This test SRAM has been made sensitive to alpha particles through the use of a cell offset voltage, and this has allowed a bench-level characterization in a laboratory setting. The experimental data are linked to a alpha-particle interaction physics and to SPICE circuit simulations through the alpha-particle collection depth. The collection depth is determined by two methods and found to be about 7 micron. In addition, alpha particles that struck outside the bloated drain were able to flip the SRAM cells. This lateral charge collection was observed to be more than 6 micron.
Document ID
19910038416
Acquisition Source
Legacy CDMS
Document Type
Reprint (Version printed in journal)
External Source(s)
Authors
Buehler, M. G.
(Jet Propulsion Lab., California Inst. of Tech. Pasadena, CA, United States)
Blaes, B. R.
(JPL Pasadena, CA, United States)
Date Acquired
August 15, 2013
Publication Date
December 1, 1990
Publication Information
Publication: IEEE Transactions on Nuclear Science
Volume: 37
ISSN: 0018-9499
Subject Category
Electronics And Electrical Engineering
Accession Number
91A23039
Distribution Limits
Public
Copyright
Other

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