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Single event induced transients in I/O devices - A characterizationThe results of single-event upset (SEU) testing performed to evaluate the parametric transients, i.e., amplitude and duration, in several I/O devices, and the impact of these transients are discussed. The failure rate of these devices is dependent on the susceptibility of interconnected devices to the resulting transient change in the output of the I/O device. This failure rate, which is a function of the susceptibility of the interconnected device as well as the SEU response of the I/O device itself, may be significantly different from an upset rate calculated without taking these factors into account. The impact at the system level is discussed by way of an example.
Document ID
19910038432
Acquisition Source
Legacy CDMS
Document Type
Reprint (Version printed in journal)
External Source(s)
Authors
Newberry, D. M.
(Control Data Corp. Bloomington, MN, United States)
Kaye, D. H.
(Control Data Corp. Bloomington, MN, United States)
Soli, G. A.
(JPL Pasadena, CA, United States)
Date Acquired
August 15, 2013
Publication Date
December 1, 1990
Publication Information
Publication: IEEE Transactions on Nuclear Science
Volume: 37
ISSN: 0018-9499
Subject Category
Electronics And Electrical Engineering
Accession Number
91A23055
Distribution Limits
Public
Copyright
Other

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