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Growth and characterization of high current density, high-speed InAs/AlSb resonant tunneling diodesInAs/AlSb double-barrier resonant tunneling diodes with peak current densities up to 370,000 A/sq cm and high peak-to-valley current ratios of 3.2 at room temperature have been fabricated. The peak current density is well-explained by a stationary-state transport model with the two-band envelope function approximation. The valley current density predicted by this model is less than the experimental value by a factor that is typical of the discrepancy found in other double-barrier structures. It is concluded that threading dislocations are largely inactive in the resonant tunneling process.
Document ID
Acquisition Source
Legacy CDMS
Document Type
Reprint (Version printed in journal)
External Source(s)
Soderstrom, J. R.
(California Institute of Technology Pasadena, United States)
Brown, E. R.
(California Inst. of Tech. Pasadena, CA, United States)
Parker, C. D.
(California Inst. of Tech. Pasadena, CA, United States)
Mahoney, L. J.
(MIT Lexington, MA, United States)
Yao, J. Y.
(Chalmers Tekniska Hogskola Goteborg, Sweden)
Date Acquired
August 15, 2013
Publication Date
January 21, 1991
Publication Information
Publication: Applied Physics Letters
Volume: 58
ISSN: 0003-6951
Subject Category
Electronics And Electrical Engineering
Accession Number
Distribution Limits

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