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Diode multipliers for submillimeter-wave InAlAs/InGaAs heterostructure monolithic integrated circuitsInAlAs/InGaAs heterostructures are studied as multiplier elements for submillimeter-wave monolithic integrated circuits. The designs considered for this purpose are based on the principle of conventional HEMT, HEMT with n+ bottom layer, and a new proposed scheme of quantum-confined modulated charge (QCMC). The QCMC diode is analyzed theoretically and experimentally showing its potential operation capability at 1.5 THz.
Document ID
19910041388
Acquisition Source
Legacy CDMS
Document Type
Reprint (Version printed in journal)
Authors
Kwon, Y. (Michigan Univ. Ann Arbor, MI, United States)
Pavlidis, D. (NASA Center for Space Terahertz Technology; Michigan, University Ann Arbor, United States)
Date Acquired
August 14, 2013
Publication Date
January 5, 1991
Publication Information
Publication: Microwave and Optical Technology Letters
Volume: 4
ISSN: 0895-2477
Subject Category
Electronics And Electrical Engineering
Accession Number
91A26011
Distribution Limits
Public
Copyright
Other

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