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A field induced guide-antiguide modulator of GaAs-AlGaAsA guide-antiguide modulator of GaAs-AlGaAs using the electric-field-induced waveguide concept was demonstrated. The device was formed with a central waveguide electrode sandwiched between two antiguide electrodes on the surface of a p-i-n multiple quantum well (MQW). Switching between lateral guiding and antiguiding was accomplished by reverse biasing either the central electrode or the adjacent electrodes to increase the index beneath these respective regions. The on-off ratio was measured to be 20:1 with a propagation loss of the on-state of about 5 dB/mm.
Document ID
19910051294
Acquisition Source
Legacy CDMS
Document Type
Reprint (Version printed in journal)
External Source(s)
Authors
Huang, T. C.
(California Univ. Santa Barbara, CA, United States)
Chung, Y.
(California Univ. Santa Barbara, CA, United States)
Young, D. B.
(California Univ. Santa Barbara, CA, United States)
Dagli, N.
(California Univ. Santa Barbara, CA, United States)
Coldren, L. A.
(California, University Santa Barbara, United States)
Date Acquired
August 15, 2013
Publication Date
February 1, 1991
Publication Information
Publication: IEEE Photonics Technology Letters
Volume: 3
ISSN: 1041-1135
Subject Category
Electronics And Electrical Engineering
Accession Number
91A35917
Distribution Limits
Public
Copyright
Other

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