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Linear arrays of InGaAs/InP avalanche photodiodes for 1.0-1.7 micronSeparate absorption and multiplication InGaAs/InP avalanche photodiodes (SAM-APDs) with a floating guard ring structure that is well-suited to array applications have been successfully demonstrated. Individual APDs have breakdown voltages greater than 80 V, multiplications over 40 at 100 nA dark current, and uniform spatial gain profiles. Uniform I-V characteristics and gains have been measured over linear dimensions as large as 1.2 cm. Gains over 10 at low multiplied dark currents were measured on 21 consecutive devices at the wafer level.
Document ID
19910052127
Acquisition Source
Legacy CDMS
Document Type
Conference Paper
Authors
Ackley, D. E.
(EPITAXX, Inc. Princeton, NJ, United States)
Hladky, J.
(EPITAXX, Inc. Princeton, NJ, United States)
Lange, M. J.
(EPITAXX, Inc. Princeton, NJ, United States)
Mason, S.
(EPITAXX, Inc. Princeton, NJ, United States)
Erickson, G.
(EPITAXX, Inc. Princeton, NJ, United States)
Olsen, G. H.
(EPITAXX, Inc. Princeton, NJ, United States)
Ban, V. S.
(Epitaxx, Inc. Princeton, NJ, United States)
Forrest, S. R.
(Southern California, University Los Angeles, CA, United States)
Staller, C.
(JPL Pasadena, CA, United States)
Date Acquired
August 15, 2013
Publication Date
January 1, 1990
Subject Category
Electronics And Electrical Engineering
Meeting Information
Meeting: Infrared Detectors and Focal Plane Arrays
Location: Orlando, FL
Country: United States
Start Date: April 18, 1990
End Date: April 19, 1990
Accession Number
91A36750
Distribution Limits
Public
Copyright
Other

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