High figure of merit thermoelectrics - Theoretical considerationsThe thermoelectric figure of merit of a semiconductor, ZT, can be calculated from a small number of microscopic material parameters, the material composition, the doping level, and the temperature. The functional dependence of ZT on these parameters has been studied for a range of material parameters using a recently developed model which accurately and self-consistently describes the thermoelectric properties of n-type silicon-germanium alloys. ZT values several times larger than current state-of-the-art values of ZT of about 1 are shown to be entirely consistent with existing theory, even using material parameters already observed. A search for materials with much higher figure of merit values therefore remains of interest, in spite of several decades of relatively slow progress in this area.
Document ID
19910053440
Acquisition Source
Legacy CDMS
Document Type
Conference Paper
Authors
Vining, Cronin B. (JPL Pasadena, CA, United States)
Date Acquired
August 15, 2013
Publication Date
January 1, 1990
Subject Category
Solid-State Physics
Meeting Information
Meeting: Intersociety Energy Conversion Engineering Conference