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Oscillations up to 712 GHz in InAs/AlSb resonant-tunneling diodesOscillations have been obtained at frequencies from 100 to 712 GHz in InAs/AlSb double-barrier resonant-tunneling diodes at room temperature. The measured power density at 360 GHz was 90 W/sq cm, which is 50 times that generated by GaAs/AlAs diodes at essentially the same frequency. The oscillation at 712 GHz represents the highest frequency reported to date from a solid-state electronic oscillator at room temperature.
Document ID
19910053891
Acquisition Source
Legacy CDMS
Document Type
Reprint (Version printed in journal)
External Source(s)
doi:10.1063/1.104902
Authors
Brown, E. R. (Massachusetts Inst. of Tech. Lexington, MA, United States)
Parker, C. D. (Massachusetts Inst. of Tech. Lexington, MA, United States)
Mahoney, L. J. (Massachusetts Inst. of Tech. Lexington, MA, United States)
Molvar, K. M. (MIT Lexington, MA, United States)
Soderstrom, J. R. (California Institute of Technology Pasadena, United States)
Date Acquired
August 15, 2013
Publication Date
May 20, 1991
Publication Information
Publication: Applied Physics Letters
Volume: 58
ISSN: 0003-6951
Subject Category
Electronics And Electrical Engineering
Accession Number
91A38514
Distribution Limits
Public
Copyright
Other

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