Thin film molybdenum silicide as potential temperature sensors for turbine enginesTemperature measurements of Mo-Si-based thin-film resistance thermometers were studied. Annealing in an argon ambient at a temperature above 1000 C for at least 1 h is required to form the stable tetragonal MoSi2 phase. With a crack-free 2-micron-thick AlN barrier layer on top, a sensor was tested up to 1200 C. The resistivity vs temperature characteristic shows the room temperature resistivity and temperature coefficient of resistivity (TCR) of the sensor to be approximately 350 microohm and 0.01195 K, respectively. No film adhesion problems were observed for at least four testing cycles.
Document ID
19910056883
Acquisition Source
Legacy CDMS
Document Type
Conference Paper
Authors
Ho, C. H. (California Univ. Los Angeles, CA, United States)
Prakash, S. (California Univ. Los Angeles, CA, United States)
Deshpandey, C. V. (California Univ. Los Angeles, CA, United States)
Doerr, H. J. (California Univ. Los Angeles, CA, United States)
Bunshah, R. F. (California, University Los Angeles, United States)