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Photovoltaic characteristics of n(+)pp(+) InP solar cells grown by OMVPEThe photovoltaic characteristics of n(+)/p/p(+) homojunction InP solar cells fabricated by organometallic vapor-phase epitaxy (OMVPE) are described. The cells are characterized by I-V, C-V and quantum efficiency measurements, and simulations are used to obtain various device and material parameters. The I-V characteristics show a high recombination rate in the depletion region; this is shown to be independent of the impurity used. It is shown that cadmium is easier to use as an acceptor for the p base and p(+) buffer and is therefore beneficial. The high quantum efficiency of 98 percent at long wavelengths measured in these cells indicates a very good collection efficiency in the base. The short-wavelength quantum efficiency is poor, indicating a high surface recombination.
Document ID
19910057269
Document Type
Conference Paper
Authors
Tyagi, S. (Rensselaer Polytechnic Inst. Troy, NY, United States)
Singh, K. (Rensselaer Polytechnic Inst. Troy, NY, United States)
Bhimnathwala, H. (Rensselaer Polytechnic Inst. Troy, NY, United States)
Ghandhi, S. K. (Rensselaer Polytechnic Inst. Troy, NY, United States)
Borrego, J. M. (Rensselaer Polytechnic Institute, Troy, NY, United States)
Date Acquired
August 15, 2013
Publication Date
January 1, 1990
Subject Category
SPACECRAFT PROPULSION AND POWER
Meeting Information
IEEE Photovoltaic Specialists Conference(Kissimmee, FL)
Funding Number(s)
CONTRACT_GRANT: NAG3-604
Distribution Limits
Public
Copyright
Other