Study of surface passivation as a function of InP closed-ampoule solar cell fabrication processing variablesThe effects of various surface preparation procedures, including chemical treatment and anodic or chemical oxidation, closed-ampoule diffusion conditions, and post-diffusion surface preparation and annealing conditions, on the passivating properties of InP have been investigated in order to optimize the fabrication procedures of n(+)p InP solar cells made by closed-ampoule diffusion of sulfur into p-type InP. The InP substrates used were p-type Cd-doped to a level of 1.7 x 10 to the 16th/cu cm, Zn-doped to levels of 2.2 x 10 to the 16th and 1.2 x 10 to the 18th/cu cm, and n-type S-doped to 4.4 x 10 to the 18th/cu cm. The passivating properties have been evaluated from photoluminescence (PL) and conductance-voltage (G-V) data. Good agreement was found between the level of surface passivation and the composition of different surface layers as revealed by X-ray photoelectron spectroscopy (XPS) analysis.
Document ID
19910057270
Acquisition Source
Legacy CDMS
Document Type
Conference Paper
Authors
Faur, Mircea (Cleveland State Univ. OH, United States)
Faur, Maria (Cleveland State Univ. OH, United States)
Jenkins, Phillip (Cleveland State Univ. OH, United States)
Goradia, Manju (Cleveland State Univ. OH, United States)
Goradia, Chandra (Cleveland State University OH, United States)
Bailey, Sheila (Cleveland State Univ. OH, United States)
Weinberg, Irving (NASA Lewis Research Center Cleveland, OH, United States)
Jayne, Douglas (Case Western Reserve University Cleveland, OH, United States)