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Measurement of surface recombination velocity on heavily doped indium phosphideSurface recombination velocity (SRV) on heavily doped n-type and p-type InP was measured as a function of surface treatment. For the limited range of substrates and surface treatments studied, SRV and surface stability depend strongly on the surface treatment. SRVs of 100,000 cm/sec in both p-type and n-type InP are obtainable, but in n-type the low-SRV surfaces were unstable, and the only stable surfaces on n-type had SRVs of more than 10to the 6th cm/sec.
Document ID
19910057308
Acquisition Source
Legacy CDMS
Document Type
Conference Paper
Authors
Jenkins, Phillip
(Cleveland State Univ. OH, United States)
Ghalla-Goradia, Manju
(Cleveland State Univ. OH, United States)
Faur, Mircea
(Cleveland State Univ. OH, United States)
Faur, Maria
(Cleveland State University OH, United States)
Bailey, Sheila
(NASA Lewis Research Center Cleveland, OH, United States)
Date Acquired
August 15, 2013
Publication Date
January 1, 1990
Subject Category
Solid-State Physics
Meeting Information
Meeting: IEEE Photovoltaic Specialists Conference
Location: Kissimmee, FL
Country: United States
Start Date: May 21, 1990
End Date: May 25, 1990
Accession Number
91A41931
Distribution Limits
Public
Copyright
Other

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