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Application of Oxidation to the Structural Characterization of Sic Epitaxial FilmsBoth 3C-SiC and 6H-SiC single-crystal films can be grown on vicinal (0001) 6H-SiC wafers. It is found that oxidation can be a powerful diagnostic process for (1) 'color mapping' the 3C and 6H regions of these films, (2) decorating stacking faults in the films, (3) enhancing the decoration of double positioning boundaries, and (4) decorating polishing damage. Contrary to previously published oxidation results, proper oxidation conditions can yield interference colors that provide a definitive map of the polytype distribution for both the Si face and C face of SiC films.
Document ID
19910061258
Acquisition Source
Legacy CDMS
Document Type
Reprint (Version printed in journal)
External Source(s)
doi:10.1063/1.105960
Authors
Powell, J. A. (NASA Lewis Research Center Cleveland, OH, United States)
Petit, J. B. (NASA Lewis Research Center Cleveland, OH, United States)
Edgar, J. H. (NASA Lewis Research Center Cleveland, OH, United States)
Jenkins, I. G. (NASA Lewis Research Center Cleveland, OH, United States)
Matus, L. G. (NASA Lewis Research Center Cleveland, OH, United States)
Date Acquired
August 14, 2013
Publication Date
July 8, 1991
Publication Information
Publication: Applied Physics Letters
Volume: 59
ISSN: 0003-6951
Subject Category
Solid-State Physics
Report/Patent Number
E-6126
Accession Number
91A45881
Distribution Limits
Public
Copyright
Other

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