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Indium gallium arsenide microwave power transistorsDepletion-mode InGaAs microwave power MISFETs with 1-micron gate lengths and up to 1-mm gate widths have been fabricated using an ion-implantation process. The devices employed a plasma-deposited silicon/silicon dioxide gate insulator. The dc I-V characteristics and RF power performance at 9.7 GHz are presented. The output power, power-added efficiency, and power gain as a function of input power are reported. An output power of 1.07 W with a corresponding power gain and power-added efficiency of 4.3 dB and 38 percent, respectively, was obtained. The large-gate-width devices provided over twice the previously reported output power for InGaAs MISFETs at X-band. In addition, output power stability within 1.2 percent over 24 h of continuous operation was achieved. In addition, a drain current drift of 4 percent over 10,000 sec was obtained.
Document ID
19910063547
Acquisition Source
Legacy CDMS
Document Type
Reprint (Version printed in journal)
External Source(s)
Authors
Johnson, Gregory A.
(Cincinnati Univ. OH, United States)
Kapoor, Vik J.
(Cincinnati Univ. OH, United States)
Shokrani, Mohsen
(Cincinnati, University OH, United States)
Messick, Louis J.
(Cincinnati Univ. OH, United States)
Nguyen, Richard
(U.S. Navy, Naval Ocean Systems Center San Diego, CA, United States)
Date Acquired
August 14, 2013
Publication Date
July 1, 1991
Publication Information
Publication: IEEE Transactions on Microwave Theory and Techniques
Volume: 39
ISSN: 0018-9480
Subject Category
Electronics And Electrical Engineering
Accession Number
91A48170
Distribution Limits
Public
Copyright
Other

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