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linear electro-optic effect in cubic silicon carbideThe first observation is reported of the electrooptic effect of cubic silicon carbide (beta-SiC) grown by a low-pressure chemical vapor deposition reactor using the hydrogen, silane, and propane gas system. At a wavelength of 633 nm, the value of the electrooptic coefficient r41 in beta-SiC is determined to be 2.7 +/- 0.5 x 10 (exp-12) m/V, which is 1.7 times larger than that in gallium arsenide measured at 10.6 microns. Also, a half-wave voltage of 6.4 kV for beta-SiC is obtained. Because of this favorable value of electrooptic coefficient, it is believed that silicon carbide may be a promising candidate in electrooptic applications for high optical intensity in the visible region.
Document ID
19910070929
Document Type
Reprint (Version printed in journal)
External Source(s)
Authors
Tang, Xiao
(Howard Univ. Washington, DC, United States)
Irvine, Kenneth G.
(Howard Univ. Washington, DC, United States)
Zhang, Dongping
(Howard Univ. Washington, DC, United States)
Spencer, Michael G.
(Howard University Washington, DC, United States)
Date Acquired
August 14, 2013
Publication Date
October 14, 1991
Publication Information
Publication: Applied Physics Letters
Volume: 59
ISSN: 0003-6951
Subject Category
SOLID-STATE PHYSICS
Funding Number(s)
CONTRACT_GRANT: NAG3-887
CONTRACT_GRANT: NSF RII-89-47537
Distribution Limits
Public
Copyright
Other