NASA Logo

NTRS

NTRS - NASA Technical Reports Server

Back to Results
AlxGa1-xAs Single-Quantum-Well Surface-Emitting LasersSurface-emitting solid-state laser contains edge-emitting Al0.08Ga0.92As single-quantum-well (SQW) active layer sandwiched between graded-index-of-refraction separate-confinement-heterostructure (GRINSCH) layers of AlxGa1-xAs, includes etched 90 degree mirrors and 45 degree facets to direct edge-emitted beam perpendicular to top surface. Laser resembles those described in "Pseudomorphic-InxGa1-xAs Surface-Emitting Lasers" (NPO-18243). Suitable for incorporation into optoelectronic integrated circuits for photonic computing; e.g., optoelectronic neural networks.
Document ID
19920000205
Acquisition Source
Legacy CDMS
Document Type
Other - NASA Tech Brief
Authors
Kim, Jae H.
(Caltech)
Date Acquired
August 15, 2013
Publication Date
April 1, 1992
Publication Information
Publication: NASA Tech Briefs
Volume: 16
Issue: 4
ISSN: 0145-319X
Subject Category
Electronic Components And Circuits
Report/Patent Number
NPO-18281
Accession Number
92B10205
Distribution Limits
Public
Copyright
Work of the US Gov. Public Use Permitted.

Available Downloads

There are no available downloads for this record.
No Preview Available