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Generating Far-Infrared Radiation By Two-Wave MixingFar-infrared radiation 1 to 6 GHz generated by two-wave mixing in asymmetrically grown GaAs/AlxGa1-xAs multiple-quantum-well devices. Two near-infrared semiconductor diode lasers phase-locked. Outputs amplified, then combined in semiconductor nonlinear multiple-quantum-well planar waveguide. Necessary to optimize design of device with respect to three factors: high degree of confinement of electromagnetic field in nonlinear medium to maximize power density, phase matching to extend length of zone of interaction between laser beams in non-linear medium, and nonlinear susceptibility. Devices used as tunable local oscillators in heterodyne-detection radiometers.
Document ID
19920000498
Document Type
Other - NASA Tech Brief
Authors
Borenstain, Shmuel (Caltech)
Date Acquired
August 15, 2013
Publication Date
September 1, 1992
Publication Information
Publication: NASA Tech Briefs
Volume: 16
Issue: 9
ISSN: 0145-319X
Subject Category
ELECTRONIC COMPONENTS AND CIRCUITS
Report/Patent Number
NPO-18344
Distribution Limits
Public
Copyright
Work of the US Gov. Public Use Permitted.