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Charge-Carrier-Scattering Spectroscopy With BEEMBallistic-electron-emission microscopy (BEEM) constitutes basis of new spectroscopy of scattering of electrons and holes. Pointed tip electrode scans near surface of metal about 100 angstrom thick on semiconductor. Principle similar to scanning tunneling microscope, except metal acts as third electrode. Used to investigate transport phenomena, scattering phenomena, and creation of hot charge carriers in Au/Si and Au/GaAs metal/semiconductor microstructures.
Document ID
19920000513
Acquisition Source
Legacy CDMS
Document Type
Other - NASA Tech Brief
Authors
Hecht, Michael H. (Caltech)
Bell, Lloyd D. (Caltech)
Kaiser, William J. (Caltech)
Date Acquired
August 15, 2013
Publication Date
September 1, 1992
Publication Information
Publication: NASA Tech Briefs
Volume: 16
Issue: 9
ISSN: 0145-319X
Subject Category
Physical Sciences
Report/Patent Number
NPO-18411
Accession Number
92B10513
Distribution Limits
Public
Copyright
Work of the US Gov. Public Use Permitted.

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