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Enhancing optical absorption in InP and GaAs utilizing profile etchingThe current state of profile etching in GaAs and InP is summarized, including data on novel geometries attainable as a function of etchant temperature, composition, and rate; substrate orientation; carrier concentration; and oxide thickness between substrate and photoresist. V-grooved solar cells were manufactured with both GaAs and InP, and the improved optical absorption was demonstrated. Preferred parameters for various applications are listed and discussed.
Document ID
19920004893
Acquisition Source
Legacy CDMS
Document Type
Conference Paper
Authors
Bailey, Sheila G.
(NASA Lewis Research Center Cleveland, OH, United States)
Fatemi, Navid S.
(NASA Lewis Research Center Cleveland, OH, United States)
Landis, Geoffrey A.
(Sverdrup Technology, Inc., Brook Park OH., United States)
Date Acquired
September 6, 2013
Publication Date
January 1, 1991
Subject Category
Spacecraft Propulsion And Power
Report/Patent Number
NAS 1.15:105325
E-6683
NASA-TM-105325
Meeting Information
Meeting: Photovoltaic Specialists Conference
Location: Las Vegas, NV
Country: United States
Start Date: October 8, 1991
End Date: October 11, 1991
Sponsors: IEEE
Accession Number
92N14111
Funding Number(s)
PROJECT: RTOP 506-41-11
Distribution Limits
Public
Copyright
Work of the US Gov. Public Use Permitted.
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