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Effect of InAlAs window layer on efficiency of indium phosphide solar cellsIndium phosphide (InP) solar cell efficiencies are limited by surface recombination. The effect of a wide bandgap, lattice-matched indium aluminum arsenide (In(0.52)Al(0.48)As) window layer on the performance of InP solar cells was investigated by using the numerical code PC-1D. The p(+)n InP solar cell performance improved significantly with the use of the window layer. No improvement was seen for the n(+)p InP cells. The cell results were explained by the band diagram of the heterostructure and the conduction band energy discontinuity. The calculated current voltage and internal quantum efficiency results clearly demonstrated that In(0.52)Al(0.48)As is a very promising candidate for a window layer material for p(+)n InP solar cells.
Document ID
19920015933
Acquisition Source
Legacy CDMS
Document Type
Conference Paper
Authors
Jain, Raj K.
(NASA Lewis Research Center Cleveland, OH, United States)
Landis, Geoffrey A.
(Sverdrup Technology, Inc., Brook Park OH., United States)
Date Acquired
September 6, 2013
Publication Date
January 1, 1992
Subject Category
Electronics And Electrical Engineering
Report/Patent Number
E-6728
NASA-TM-105354
NAS 1.15:105354
Meeting Information
Meeting: Photovoltaic Specialists Conference
Location: Las Vegas, NV
Country: United States
Start Date: October 7, 1991
End Date: October 11, 1991
Sponsors: IEEE
Accession Number
92N25176
Funding Number(s)
PROJECT: RTOP 506-41-11
Distribution Limits
Public
Copyright
Work of the US Gov. Public Use Permitted.
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