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Y1Ba2Cu3O(6+delta) growth on thin Y-enhanced SiO2 buffer layers on siliconSiO2 buffer layers as thin as 2 nm have been developed for use in the growth of Y1Ba2Cu3O(6+delta) thin films on silicon substrates. The SiO2 layers are formed through Y enhancement of silicon oxidation, and are highly stoichiometric. Y1Ba2Cu3O(6+delta) film growth on silicon with thin buffer layers has shown c orientation and Tc0 = 78 K.
Document ID
19920029324
Acquisition Source
Legacy CDMS
Document Type
Reprint (Version printed in journal)
External Source(s)
Authors
Robin, T.
(Houston Univ. TX, United States)
Mesarwi, A.
(Houston Univ. TX, United States)
Wu, N. J.
(Houston Univ. TX, United States)
Fan, W. C.
(Houston Univ. TX, United States)
Espoir, L.
(Houston Univ. TX, United States)
Ignatiev, A.
(Houston, University TX, United States)
Sega, R.
(NASA Johnson Space Center; Houston, University TX, United States)
Date Acquired
August 15, 2013
Publication Date
October 28, 1991
Publication Information
Publication: Applied Physics Letters
Volume: 59
ISSN: 0003-6951
Subject Category
Solid-State Physics
Accession Number
92A11948
Distribution Limits
Public
Copyright
Other

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