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Growth of electronic materials in microgravityA growth experiment aimed at growing two selenium-doped gallium arsenide crystals, each of which are one inch in diameter and 3.45 inches in length, is described. Emphasis is placed on the effect of microgravity on the segregation behavior of electronic materials. The lessons learned from the 1975 ASTP mission have been incorporated in this experiment.
Document ID
19920030244
Acquisition Source
Legacy CDMS
Document Type
Conference Paper
Authors
Matthiesen, D. H. (GTE Laboratories, Inc. Waltham, MA, United States)
Date Acquired
August 15, 2013
Publication Date
January 1, 1991
Subject Category
Materials Processing
Meeting Information
Meeting: AIAA/IKI Microgravity Science Symposium
Location: Moscow
Country: USSR
Start Date: May 13, 1991
End Date: May 17, 1991
Accession Number
92A12868
Funding Number(s)
CONTRACT_GRANT: NAS3-24644
Distribution Limits
Public
Copyright
Other

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