Transport phenomena during vapor growth of optoelectronic material - A mercurous chloride systemCrystal growth velocity was measured in a mercurous chloride system in a two-zone transparent furnace as a function of the Rayleigh number by varying a/L, where a is the radius of the growth tube and L is the transport length. Growth velocity data showed different trends at low and high aspect ratio, a result that does not support the velocity-aspect ratio trend predicted by theories. The system cannot be scaled on the basis of measurements done at a low aspect ratio. Some change in fluid flow behavior occurs in the growth tube as the aspect ratio increases.
Document ID
19920034434
Acquisition Source
Legacy CDMS
Document Type
Conference Proceedings
Authors
Singh, N. B. (Westinghouse Science and Technology Center Pittsburgh, PA, United States)