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Ballistic-carrier spectroscopy of the CoSi2/Si interfaceBallistic-electron-emission microscopy and related ballistic-hole and carrier-scattering spectroscopies were used to investigate carrier transport in the epitaxial CoSi2/Si system. An unexpected degree of variation in interface transmission was observed despite the high crystal quality of the epitaxial silicide layer. Furthermore, clear evidence of the CoSi2 band structure was observed, which has a dramatic effect on interface transport. The major effect of the silicide band structure is to increase the interfacial barrier to electron transmission to a value in excess of the Schottky barrier height.
Document ID
19920037236
Acquisition Source
Legacy CDMS
Document Type
Reprint (Version printed in journal)
Authors
Kaiser, W. J.
(Jet Propulsion Lab., California Inst. of Tech. Pasadena, CA, United States)
Hecht, M. H.
(Jet Propulsion Lab., California Inst. of Tech. Pasadena, CA, United States)
Fathauer, R. W.
(Jet Propulsion Lab., California Inst. of Tech. Pasadena, CA, United States)
Bell, L. D.
(JPL Pasadena, CA, United States)
Lee, E. Y.
(Rensselaer Polytechnic Institute, Troy, MI, United States)
Davis, L. C.
(Ford Motor Co. Dearborn, MI, United States)
Date Acquired
August 15, 2013
Publication Date
September 15, 1991
Publication Information
Publication: Physical Review B - Condensed Matter, 3rd Series
Volume: 44
ISSN: 0163-1829
Subject Category
Solid-State Physics
Accession Number
92A19860
Distribution Limits
Public
Copyright
Other

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