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Columnar epitaxy of hexagonal and orthorhombic silicides on Si(111)Columnar grains of PtSi and CrSi2 surrounded by high-quality epitaxial silicon are obtained by ultrahigh vacuum codeposition of Si and metal in an approximately 10:1 ratio on Si(111) substrates heated to 610-840 C. This result is similar to that found previously for CoSi2 (a nearly-lattice-matched cubic-fluorite crystal) on Si(111), in spite of the respective orthorhombic and hexagonal structures of PtSi and CrSi2. The PtSi grains are epitaxial and have one of three variants of the relation defined by PtSi(010)/Si(111), with PtSi 001 line/Si 110 line type.
Document ID
19920037489
Acquisition Source
Legacy CDMS
Document Type
Conference Proceedings
Authors
Fathauer, R. W.
(JPL Pasadena, CA, United States)
Nieh, C. W.
(Hughes Research Laboratories Malibu, CA, United States)
Xiao, Q. F.
(Jet Propulsion Lab., California Inst. of Tech. Pasadena, CA, United States)
Hashimoto, Shin
(New York, State University Albany, United States)
Date Acquired
August 15, 2013
Publication Date
January 1, 1990
Subject Category
Solid-State Physics
Accession Number
92A20113
Funding Number(s)
CONTRACT_GRANT: NSF DMR-88-11795
Distribution Limits
Public
Copyright
Other

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