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A 128 x 128 InGaAs detector array for 1.0 - 1.7 micronsA two-dimensional 128 x 128 detector array for the 1.0 - 1.7 micron spectral region has been demonstrated with indium gallium arsenide. The 30 micron square pixels had 60 micron spacing in both directions and were designed to be compatible with a 2D Reticon multiplexer. Dark currents below 100 pA, capacitance near 0.1 pF, and quantum efficiencies above 80 percent were measured. Probe maps of dark current and quantum efficiency are presented along with pixel dropout data and wafer yield which was as high as 99.89 percent (7 dropouts) in an area of 6528 pixels and 99.37 percent (103 dropouts) over an entire 128 x 128 pixel region.
Document ID
19920038832
Acquisition Source
Legacy CDMS
Document Type
Conference Paper
Authors
Olsen, G.
(EPITAXX, Inc. Princeton, NJ, United States)
Joshi, A.
(EPITAXX, Inc. Princeton, NJ, United States)
Lange, M.
(EPITAXX, Inc. Princeton, NJ, United States)
Woodruff, K.
(EPITAXX, Inc. Princeton, NJ, United States)
Mykietyn, E.
(EPITAXX, Inc. Princeton, NJ, United States)
Gay, D.
(EPITAXX, Inc. Princeton, NJ, United States)
Ackley, D.
(EPITAXX, Inc. Princeton, NJ, United States)
Erickson, G.
(EPITAXX, Inc. Princeton, NJ, United States)
Ban, V.
(EPITAXX, Inc. Princeton, NJ, United States)
Staller, C.
(JPL Pasadena, CA, United States)
Date Acquired
August 15, 2013
Publication Date
January 1, 1990
Subject Category
Instrumentation And Photography
Meeting Information
Meeting: Infrared Technology XVI
Location: San Diego, CA
Country: United States
Start Date: July 11, 1990
End Date: July 13, 1990
Accession Number
92A21456
Distribution Limits
Public
Copyright
Other

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