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Optical processing using photorefractive GaAs and InPThe unique features of photorefractive compound semiconductors are presented. The advantages of this class of nonlinear optical materials for optical processing are illustrated with examples using GaAs and InP. The difference between GaAs and InP in the laser power density requirement is discussed.
Document ID
19920039838
Acquisition Source
Legacy CDMS
Document Type
Conference Paper
Authors
Liu, Duncan T. H. (Jet Propulsion Lab., California Inst. of Tech. Pasadena, CA, United States)
Cheng, Li-Jen (JPL Pasadena, CA, United States)
Luke, Keung L. (California State University Long Beach, United States)
Date Acquired
August 15, 2013
Publication Date
January 1, 1991
Subject Category
Optics
Meeting Information
Meeting: Nonlinear Optics
Location: Los Angeles, CA
Country: United States
Start Date: January 23, 1991
End Date: January 25, 1991
Sponsors: SPIE
Accession Number
92A22462
Distribution Limits
Public
Copyright
Other

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