NASA Logo

NTRS

NTRS - NASA Technical Reports Server

Back to Results
Post irradiation effects (PIE) in integrated circuitsPost-irradiation effects (PIE) ranging from normal recovery to catastrophic failure have been observed in integrated circuits during the PIE period. Data presented show failure due to rebound after a 10 krad(Si) dose. In particular, five device types are investigated with varying PIE response. Special attention has been given to the HI1-507A analog multiplexer because its PIE response is extreme. X-ray diffraction has been uniquely employed to measure physical stress in the HI1-507A metallization. An attempt has been made to show a relationship between stress relaxation and radiation effects. All data presented support the current MIL-STD Method 1019.4 but demonstrate the importance of performing PIE measurements, even when mission doses are as low as 10 krad(Si).
Document ID
19920041440
Document Type
Reprint (Version printed in journal)
External Source(s)
Authors
Shaw, D. C.
(Jet Propulsion Lab., California Inst. of Tech. Pasadena, CA, United States)
Lowry, L.
(Jet Propulsion Lab., California Inst. of Tech. Pasadena, CA, United States)
Barnes, C.
(Jet Propulsion Lab., California Inst. of Tech. Pasadena, CA, United States)
Zakharia, M.
(Jet Propulsion Lab., California Inst. of Tech. Pasadena, CA, United States)
Agarwal, S.
(Jet Propulsion Lab., California Inst. of Tech. Pasadena, CA, United States)
Rax, B.
(JPL Pasadena, CA, United States)
Date Acquired
August 15, 2013
Publication Date
December 1, 1991
Publication Information
Publication: IEEE Transactions on Nuclear Science
Volume: 38
ISSN: 0018-9499
Subject Category
Electronics And Electrical Engineering
Accession Number
92A24064
Distribution Limits
Public
Copyright
Other

Available Downloads

There are no available downloads for this record.
No Preview Available