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An anti-reflection coating for use with PMMA at 193 nmAn antireflection coating (ARC) for use with poly(methyl methacrylate) (PMMA) resist for ArF excimer laser lithography (193 nm) was formulated. It consists of PMMA and a bis-azide, 4.4-prime-diazidodiphenyl sulfone (DDS) which crosslinks the film after deep UV (260 nm) irradiation and subsequent annealing. The reacted DDS then serves as the absorber for the 193 nm radiation and also prevents mixing of the ARC and PMMA during PMMA spin-coating and development. The effectiveness of the ARC was demonstrated by exposing, in PMMA, using achromatic holographic lithography, gratings of 100 nm period (about 50 nm linewidth) that are almost entirely free of an orthogonal standing wave.
Document ID
19920043881
Acquisition Source
Legacy CDMS
Document Type
Reprint (Version printed in journal)
Authors
Yen, Anthony
(NASA Marshall Space Flight Center Huntsville, AL, United States)
Smith, Henry I.
(NASA Marshall Space Flight Center Huntsville, AL, United States)
Schattenburg, M. L.
(MIT Cambridge, MA, United States)
Taylor, Gary N.
(AT&T Bell Laboratories Murray Hill, NJ, United States)
Date Acquired
August 15, 2013
Publication Date
February 1, 1992
Publication Information
Publication: Electrochemical Society, Journal
Volume: 139
ISSN: 0013-4651
Subject Category
Optics
Accession Number
92A26505
Funding Number(s)
CONTRACT_GRANT: AF-AFOSR-88-0304
CONTRACT_GRANT: DAAL03-89-C-0001
CONTRACT_GRANT: NAS8-36748
Distribution Limits
Public
Copyright
Other

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