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Record Details

Record 66 of 13289
Tunnel injection transit-time diodes for W-band power generation
Author and Affiliation:
Kidner, C.(NASA, Washington, DC, United States)
Eisele, H.(NASA, Washington, DC, United States)
Haddad, G. I.(Michigan, University, Ann Arbor, United States)
Abstract: GaAs p(+ +)n(+)n(-)n(+) single-drift tunnel injection transit-time (TUNNETT) diodes for W-band operation have been successfully designed and tested. An output power of 32 mW at 93.5 GHz with a dc to RF conversion efficiency of 2.6 percent was obtained. The oscillations have a clean spectrum in a conventional waveguide cavity.
Publication Date: Feb 27, 1992
Document ID:
19920046389
(Acquired Nov 22, 1995)
Accession Number: 92A29013
Subject Category: ELECTRONICS AND ELECTRICAL ENGINEERING
Document Type: Journal Article
Publication Information: Electronics Letters (ISSN 0013-5194); 28; 511-513
Publisher Information: United Kingdom
Contract/Grant/Task Num: NAGW-1334
Financial Sponsor: NASA; United States
Organization Source: NASA; Washington, DC, United States
Description: 3p; In English
Distribution Limits: Unclassified; Publicly available; Unlimited
Rights: Copyright
NASA Terms: AVALANCHE DIODES; ELECTRON TUNNELING; MILLIMETER WAVES; SEMICONDUCTOR DEVICES; TUNNEL DIODES; ELECTRIC GENERATORS; GALLIUM ARSENIDES; HIGH FREQUENCIES; MOLECULAR BEAM EPITAXY; P-N JUNCTIONS
Imprint And Other Notes: Electronics Letters (ISSN 0013-5194), vol. 28, Feb. 27, 1992, p. 511-513.
Availability Source: Other Sources
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