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The temperature dependent variation of bulk and surface composition of In(x)Ga(1-x)As on GaAs grown by chemical beam epitaxy studied by RHEED, X-ray diffraction and XPSThe paper investigates the bulk as well as near-surface composition of In(x)Ga(1-x)As epilayers on GaAs grown by chemical beam epitaxy (CBE) as a function of triethylindium flow rate and substrate temperature by reflection high energy electron diffraction (RHEED), X-ray diffraction, and XPS. To clarify whether the bulk stoichiometry of CBE-grown ternaries can be extracted from the growth rate change as determined by the change in the period of RHEED oscillations from binary to ternary compound growth, a systematic study of growth rate change as a function of ternary bulk composition determined by X-ray diffraction was performed at various temperatures. It is shown that for low growth temperatures there is a linear relationship between the two methods of determination, whereas no correlation is found for higher growth temperatures, in contrast to the MBE case where the two methods of determination yield identical results. In the near surface region the epilayer composition is determined in situ by XPS.
Document ID
19920046777
Acquisition Source
Legacy CDMS
Document Type
Reprint (Version printed in journal)
Authors
Hansen, H. S.
(Odense Universitet Denmark)
Bensaoula, A.
(Houston, University TX, United States)
Tougaard, S.
(Odense Universitet Denmark)
Zborowski, J.
(NASA Headquarters Washington, DC United States)
Ignatiev, A.
(Houston, University TX, United States)
Date Acquired
August 15, 2013
Publication Date
February 1, 1992
Publication Information
Publication: Journal of Crystal Growth
Volume: 116
Issue: 3-4,
ISSN: 0022-0248
Subject Category
Solid-State Physics
Accession Number
92A29401
Distribution Limits
Public
Copyright
Other

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