Model for oxygen recombination on silicon-dioxide surfaces. II - Implications toward reentry heatingThis paper briefly reviews the model for recombination of oxygen on a silicon-dioxide surface presented in detail in a previous paper. New data supporting the model is also presented. The ramifications of the model toward the production of excited molecular oxygen is examined as it pertains to surface heating. A reentry simulation is given and compared to STS-2 reentry data, and conclusions are drawn as to the implications of the recombination model toward reentry heating. A possible buffering of the heating above a critical temperature associated with the physics of the model is also discussed.
Document ID
19920046962
Acquisition Source
Legacy CDMS
Document Type
Conference Paper
Authors
Jumper, E. J. (Notre Dame, University IN, United States)
Seward, W. A. (National Aero-Space Plane Joint Program Office Wright-Patterson AFB, OH, United States)