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Room-temperature operation of MOCVD-grown GaInAs/InP strained-layer multiquantum well lasers in 1.8 micron rangeThe first successful room-temperature pulsed operation is reported of InGaAs strained layer multiquantum well injection lasers grown by MOVPE on InP substrates in the 1.8 micron range. The threshold current density and the external differential quantum efficiency of the 10 micron wide ridge waveguide lasers were 2.5 kA/sq cm (cavity length = 1 mm) and 5 percent (cavity length = 400 microns), respectively. Broad-area lasers, 100 microns wide and 1 mm long, had a reverse leakage current of less than 10 microamps at -1 V indicating high quality of the epitaxial layers.
Document ID
19920059636
Acquisition Source
Legacy CDMS
Document Type
Reprint (Version printed in journal)
Authors
Forouhar, S.
(JPL Pasadena, CA, United States)
Larsson, A.
(JPL, Pasadena, CA; Chalmers University of Technology, Goteborg, Sweden)
Ksendzov, A.
(Jet Propulsion Lab., California Inst. of Tech. Pasadena, CA, United States)
Lang, R. J.
(JPL Pasadena, CA, United States)
Tothill, N.
(Jet Propulsion Lab., California Inst. of Tech. Pasadena, CA, United States)
Scott, M. D.
(Epitaxial Products International, Ltd. Cardiff, United Kingdom)
Date Acquired
August 15, 2013
Publication Date
May 7, 1992
Publication Information
Publication: Electronics Letters
Volume: 28
Issue: 10, M
ISSN: 0013-5194
Subject Category
Lasers And Masers
Accession Number
92A42260
Distribution Limits
Public
Copyright
Other

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