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Millimeter-wave and optoelectronic applications of heterostructure integrated circuitsThe properties are reviewed of heterostructure devices for microwave-monolithic-integrated circuits (MMICs) and optoelectronic integrated circuits (OICs). Specific devices examined include lattice-matched and pseudomorphic InAlAs/InGaAs high-electron mobility transistors (HEMTs), mixer/multiplier diodes, and heterojunction bipolar transistors (HBTs) developed with a number of materials. MMICs are reviewed that can be employed for amplification, mixing, and signal generation, and receiver/transmitter applications are set forth for OICs based on GaAs and InP heterostructure designs. HEMTs, HBTs, and junction-FETs can be utilized in combination with PIN, MSM, and laser diodes to develop novel communication systems based on technologies that combine microwave and photonic capabilities.
Document ID
19920063529
Document Type
Conference Paper
Authors
Pavlidis, Dimitris
(Michigan, University Ann Arbor, United States)
Date Acquired
August 15, 2013
Publication Date
January 1, 1991
Subject Category
Electronics And Electrical Engineering
Meeting Information
Meeting: Physical Concepts of Materials for Novel Optoelectronic Device Applications II: Device Physics and Applications
Location: Aachen
Country: Germany
Start Date: October 28, 1990
End Date: November 2, 1990
Sponsors: SPIE
Accession Number
92A46153
Funding Number(s)
CONTRACT_GRANT: NAGW-1334
CONTRACT_GRANT: DAAL03-87-K-0007
Distribution Limits
Public
Copyright
Other

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