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High power singlemode GaInAs lasers with distributed Bragg reflectorsHigh power singlemode strained GaInAs lasers have been fabricated which use buried second order gratings as distributed Bragg reflectors. The lasers operate in an edge emitting fashion with CW powers in excess of 110 mW with single longitudinal and transverse mode operation at 971.9 nm up to 42 mW.
Document ID
19920064350
Acquisition Source
Legacy CDMS
Document Type
Reprint (Version printed in journal)
Authors
O'Brien, S. (NASA Headquarters Washington, DC United States)
Parke, R. (NASA Headquarters Washington, DC United States)
Welch, D. F. (NASA Headquarters Washington, DC United States)
Mehuys, D. (NASA Headquarters Washington, DC United States)
Scifres, D. (Spectra Diode Laboratories San Jose, CA, United States)
Date Acquired
August 15, 2013
Publication Date
June 18, 1992
Publication Information
Publication: Electronics Letters
Volume: 28
Issue: 13 J
ISSN: 0013-5194
Subject Category
Lasers And Masers
Accession Number
92A46974
Funding Number(s)
CONTRACT_GRANT: NASW-1415
Distribution Limits
Public
Copyright
Other

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