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High-efficiency, high-output-power antiguide laser diode arraysAntiguide laser arrays have been fabricated and operated up to peak pulsed powers of 7.7 W in a beam with a full-width at half-maximum in the main lobe of 0.7 deg. Up to 0.7 W of continuous wave power is emitted into a radiation pattern 2.5 times the diffraction limit. By varying the temperature of the array to vary the operating wavelength of the device, the threshold gain condition of the array modes is altered, allowing thermal tuning of the far field of the device.
Document ID
19920065437
Acquisition Source
Legacy CDMS
Document Type
Conference Paper
Authors
Mehuys, D.
(NASA Langley Research Center Hampton, VA, United States)
Major, J. S., Jr.
(NASA Langley Research Center Hampton, VA, United States)
Welch, D.
(NASA Langley Research Center Hampton, VA, United States)
Scifres, D. R.
(Spectra Diode Laboratories, Inc. San Jose, CA, United States)
Date Acquired
August 15, 2013
Publication Date
January 1, 1992
Subject Category
Lasers And Masers
Meeting Information
Meeting: Laser Diode Technology and Applications IV
Location: Los Angeles, CA
Country: United States
Start Date: January 20, 1992
End Date: January 22, 1992
Sponsors: SPIE
Accession Number
92A48061
Distribution Limits
Public
Copyright
Other

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