NASA Logo

NTRS

NTRS - NASA Technical Reports Server

Back to Results
Temperature independent quantum well FET with delta channel dopingA temperature independent device is presented which uses a quantum well structure and delta doping within the channel. The device requires a high delta doping concentration within the channel to achieve a constant Hall mobility and carrier concentration across the temperature range 300-1.4 K. Transistors were RF tested using on-wafer probing and a constant G sub max and F sub max were measured over the temperature range 300-70 K.
Document ID
19920066972
Acquisition Source
Legacy CDMS
Document Type
Reprint (Version printed in journal)
Authors
Young, P. G.
(NASA Lewis Research Center Cleveland, OH, United States)
Mena, R. A.
(NASA Lewis Research Center Cleveland, OH, United States)
Alterovitz, S. A.
(NASA Lewis Research Center Cleveland, OH, United States)
Schacham, S. E.
(NASA Lewis Research Center Cleveland, OH, United States)
Haugland, E. J.
(NASA Lewis Research Center Cleveland, OH, United States)
Date Acquired
August 15, 2013
Publication Date
July 2, 1992
Publication Information
Publication: Electronics Letters
Volume: 28
Issue: 14, J
ISSN: 0013-5194
Subject Category
Electronics And Electrical Engineering
Accession Number
92A49596
Distribution Limits
Public
Copyright
Other

Available Downloads

There are no available downloads for this record.
No Preview Available