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High power singlemode edge-emitting master oscillator power amplifierAn edge-emitting monolithically integrated master oscillator power amplifier (M-MOPA) has been fabricated by integrating a distributed Bragg reflector laser with a 500 microns long single mode amplifier. The M-MOPA contains a strained InGaAs quantum well in the active region and operates at about 981.5 nm in an edge-emitting fashion with maximum powers in excess of 175 mW. Single longitudinal and transverse mode operation is maintained to powers in excess of 110 mW CW.
Document ID
19920068366
Acquisition Source
Legacy CDMS
Document Type
Reprint (Version printed in journal)
Authors
O'Brien, S. (NASA Langley Research Center Hampton, VA, United States)
Parke, R. (NASA Langley Research Center Hampton, VA, United States)
Welch, D. F. (NASA Langley Research Center Hampton, VA, United States)
Mehuys, D. (NASA Langley Research Center Hampton, VA, United States)
Scifres, D. (Spectra Diode Laboratories San Jose, CA, United States)
Date Acquired
August 15, 2013
Publication Date
July 16, 1992
Publication Information
Publication: Electronics Letters
Volume: 28
Issue: 15 J
ISSN: 0013-5194
Subject Category
Lasers And Masers
Accession Number
92A50990
Funding Number(s)
CONTRACT_GRANT: NAS1-19287
Distribution Limits
Public
Copyright
Other

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